The film-forming process is mainly divided into two ways, one is sputtering metal film deposition, by charged particles bombarding the surface of the material, so that the atoms get enough energy to enter the gas phase, deposited on the surface of the workpiece, and the use of gas is generally inert gas (such as argon);
the other way is CVD non-metallic film deposition, the use of PECVD technology, a series of chemical reactions to generate solid products and deposited them on the surface of the glass substrate, the use of electronic special gases such as silane, phosphorane, and nitrogen trifluoride.
Whichever method is used involves the supply of gas, the electron gas needs to be filtered to remove any contaminants entrained in the gas delivery before entering the equipment chamber to participate in the reaction. Brother Filtration recommends our Gas filter housing to help you remove the impurities in the gas.
The photolithography process consists of four parts: washing, coating, exposure, and development.
In the lithography process of thin film transistors, each step may introduce harmful particle contamination, microbubble void defects, and metal contamination on the surface of the glass substrate, so the washing process is essential.
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